Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature.
نویسندگان
چکیده
We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.
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ورودعنوان ژورنال:
- Chemical communications
دوره 50 10 شماره
صفحات -
تاریخ انتشار 2014